Radiation induced defects of III-V solar cells embedded with InAs quantum dots

Sato, Shinichiro; Schmieder, K.*; Hubbard, S.*; Forbes, D.*; Warner, J.*; Oshima, Takeshi; Walters, R.*

no journal, , 

GaAs pn-junction diodes with embedded InAs quantum dots (QDs) are irradiated with high energy protons and the generated deep level traps are investigated using Deep Level Transient Spectroscopy (DLTS). The results are compared to GaAs pn-junction diodes without QDs in order to identify the origin of deep level traps. In addition, the fluence dependence of trap density is investigated and it is shown that traps induced by irradiation increase in proportion to the fluence whereas EL2 trap, which appears before irradiation, is not affected by irradiation.